Part Number | STF14NM50N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Qualcomm |
Description | MOSFET N-CH 500V 12A TO220FP |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 816pF @ 50V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 25W (Tc) |
Rds On (Max) @ Id, Vgs | 320 mOhm @ 6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FP |
Package / Case | TO-220-3 Full Pack |
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Hot Offer
STF14NM50N
QUALC
10000
0.21
Zhaoxin Electronic Limited
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9050
1.2775
LvangChip(HongKong)Co.,Limited
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CIS Ltd (CHECK IC SOLUTION LIMITED)
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QUALLCOM
8000
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19
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JINDE ELECTRONICS (HK) CO., LIMITED