Part Number | QH8MA3TCR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Qualcomm |
Description | MOSFET N/P-CH 30V TSMT8 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N and P-Channel |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 7A, 5.5A |
Rds On (Max) @ Id, Vgs | 29 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 15V |
Power - Max | 1.5W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | TSMT8 |
Image |
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