Part Number | PMXB43UNE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Qualcomm |
Description | MOSFET N-CH 20V 3.2A 3DFN |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 551pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 400mW (Ta), 8.33W (Tc) |
Rds On (Max) @ Id, Vgs | 54 mOhm @ 3.2A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DFN1010D-3 |
Package / Case | 3-XDFN Exposed Pad |
Image |
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