Part Number | IRF3000 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Qualcomm |
Description | MOSFET N-CH 300V 1.6A 8-SOIC |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 300V |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 730pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 960mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF3000
QUALC
220360
0.12
Cinty Int'l (HK) Industry Co., Limited
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QUAL
400
1.0625
Gallop Great Holdings (Hong Kong) Limited
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QUALCO
13000
2.005
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF3000 CELL-8
QUALLCOM
11024
2.9475
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QUAILCOMM
11400
3.89
CIS Ltd (CHECK IC SOLUTION LIMITED)